5A 800V N溝道增強型場效應管--SVF5N80F/T/MJ/K

SVF5N80F/T/MJ/K N溝道增強型高壓功率MOS場效應晶體管采用士蘭微電子的F-CellTM平面VDMOS工藝技術制造。工藝及條狀的原胞設計結構使得該產(chǎn)品具有較低的導通電阻、優(yōu)越的開關性能及很高的雪崩擊穿耐量。 該產(chǎn)品可廣泛應用于AC-DC開關電源,DC-DC電源轉換器，高壓H橋PWM馬達驅動。

NCE65NF190V場效應管新潔能代理商

The series of devices use advanced trench gate superjunction technology and design to provide excellent RDS(ON)with low gate charge. This super junction MO...

SVSP20N60TD2-場效應管

SVSP20N60FJD(K)(T)(PN)(S)(P7)D2 N溝道增強型高壓功率MOSFET采用士蘭微電子超結MOS技術平臺制造，具有很低的傳導.損耗和開關損耗。使得功率轉換器具有高效，高功率密度，提高熱行為。此外，SVSP20N60FJD(K)(T)(PN)(S)(P7)D2應用廣泛。如，適用于硬/軟開...

SVS60R190FJD(F)(D)(L8A)(T)(S)(K)(P7)(PN)D4 場效應管

SVSP24N60FJD(T)D2場效應管

SVSP24N60FJD(T)D2 N溝道增強型高壓功率MOSFET 采用士蘭微電子超結MOS技術平臺制造，具有很低的傳導損耗和開關損耗。使得功率轉換器具有高效，高功率密度，提高熱行為.此外，SVSP24N60FJD(T)D2 應用廣泛。如，適用于硬/軟開關拓撲。

士蘭微38A, 600V 超結 MOS功率管-SVSP60R090P7(L)(FJD)(T)(S)HD4

SVSP60R090P7(L)(FJD)(T)(S)HD4 N溝道增強型高壓功率MOSFET采用士蘭微電子超結MOS技術制造，具有很低的傳導損耗和開關損耗，使得功率轉換器具有高效，高功率密度，提高熱行為。此外，SVSP60R090P7(L)(FJD)(T)(S)HD4 應用廣泛。如適用于硬/軟開關拓撲。

新潔能場效應管NCE65NF036T-TO-247封裝MOS管

The series of devices use advanced trench gate superjunction technology and design to provide ultra-low RDS(ON)and low gate charge and With a rapid reco...

新潔能場效應管NCE65NF023T-TO-220F封裝MOS管

The series of devices use advanced trench gate superjunction technology and design to provide ultra-low RDS(ON)and low gate charge and With a rapid recover...

新潔能場效應管NCE65NF068T-TO-247封裝MOS管

新潔能場效應管NCE65NF099F-MOS管TO-220F封裝

The series of devices use advanced trench gate superjunction technology and design to provide ultra-low RDS(ON)and low gate charge and With a rapid recover...

新潔能MOS管NCE65NF130F場效應管

The series of devices use advanced trench gate superjunction technology and design to provide ultra-low RDS(ON)and low gate charge and With a rapid recover...

新潔能場效應管650V-MOS管NCE65TF099D,NCE65TF099,NCE65TF099F

The series of devices use advanced trench gate superjunction technology and design to provide excellent RDS(ON)with low gate charge. This super junction MO...

新潔能場效應管650V-MOS管NCE65TF130F

The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junctio...

MOS管 650V N溝道TO-220F MOSFET場效應管-NCE65T180F

The series of devices use advanced trench gate superjunction technology and design to provide excellent RDS(ON)with low gate charge. This super junction MO...

N通道超級溝槽ii功率mosfet--NCEP058N85D

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both c...

增強型功率mosN溝道--NCE4080K

The NCE4080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications...

N溝道增強型功率mosfet--NCE3010S

The NCE3010S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications...

龍騰12A,N渠道650V超級MOS管--LND12N65

Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performan...

龍騰10A,N渠道650V超級MOS管--LND10N65

Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology.The resulting device has low conduction resistance,superior switching performanc...

龍騰N渠道650V,4A超級MOS管--LND4N65

The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performanc...